Impact of neutron induced Single-Event Multiple Transients in ADDLL based frequency multiplier

被引：1
|
作者：
Srinivasan, Balaji [1 ]
Rajalingam, Prithiviraj [2 ]
Routray, Soumyaranjan [2 ]
机构：
[1] Loyola ICAM Coll Engn & Technol, Dept Elect & Commun Engn, Chennai 600034, India
[2] SRM Inst Sci & Technol, Dept Elect & Commun Engn, Chennai 603203, India
来源：
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2022年 / 154卷
关键词：
Delay-Locked Loop; Frequency multiplier; Radiation effect; DELAY-LOCKED LOOP; DESIGN;
D O I：
10.1016/j.aeue.2022.154315
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the impact of radiation-induced Single-Event Multiple Transients (SEMT) in All Digital Delay-Locked Loop (ADDLL) and its impact on the output of frequency multiplier. The performance of the frequency multiplier such as the phase noise and jitter etc. are degraded due propagation of the SEMT from the ADDLL. This paper: (1) shows the impact of SEMTs in the ADDLL in modern technologies, (2) shows how the frequency multiplier circuit performance can vary depending on the severity of SEMTs effects, and (3) demonstrates proposed edge-combined ADDLL based frequency multiplier performance benefits for more reliable operation.
引用
收藏
页数：10
相关论文
共 50 条
  • [41] Effects of angle of incidence on proton and neutron-induced single-event latchup
    Schwank, J. R.
    Shaneyfelt, M. R.
    Baggio, J.
    Dodd, P. E.
    Felix, J. A.
    Ferlet-Cavrois, V.
    Paillet, P.
    Lum, G. K.
    Girard, S.
    Blackmore, E.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3122 - 3131
  • [42] SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients
    Fleetwood, Zachary E.
    Ildefonso, Adrian
    Tzintzarov, George N.
    Wier, Brian
    Raghunathan, Uppili
    Cho, Moon-Kyu
    Song, Ickhyun
    Wachter, Mason T.
    Nergui, Delgermaa
    Khachatrian, Ani
    Warner, Jeffrey H.
    McMarr, Patrick
    Hughes, Harold
    Zhang, Enxia
    McMorrow, Dale
    Paki, Pauline
    Joseph, Alvin
    Jain, Vibhor
    Cressler, John D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 65 (01) : 399 - 406
  • [43] Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes
    Asai, Hiroaki
    Sugimoto, Kenji
    Nashiyama, Isamu
    Iide, Yoshiya
    Shiba, Kensuke
    Matsuda, Mieko
    Miyazaki, Yoshio
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (04) : 880 - 885
  • [44] Analysis of neutron-induced single-event burnout in SiC power MOSFETs
    Shoji, Tomoyuki
    Nishida, Shuichi
    Hamada, Kimimori
    Tadano, Hiroshi
    MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) : 1517 - 1521
  • [45] Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs
    Gaillardin, M.
    Raine, M.
    Paillet, P.
    Adell, P. C.
    Girard, S.
    Duhamel, O.
    Andrieu, F.
    Barraud, S.
    Faynot, O.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 365 : 631 - 635
  • [46] Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates
    Gong, Huiqi
    Ni, Kai
    Zhang, En Xia
    Sternberg, Andrew L.
    Kozub, John A.
    Alles, Michael L.
    Reed, Robert A.
    Fleetwood, Daniel M.
    Schrimpf, Ronald D.
    Waldron, Niamh
    Kunert, Bernardette
    Linten, Dimitri
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (01) : 376 - 383
  • [47] Impact of Irradiation Side on Neutron-Induced Single-Event Upsets in 65-nm Bulk SRAMs
    Abe, Shinichiro
    Liao, Wang
    Manabe, Seiya
    Sato, Tatsuhiko
    Hashimoto, Masanori
    Watanabe, Yukinobu
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (07) : 1374 - 1380
  • [48] Design technique for mitigation of alpha-particle-induced single-event transients in combinational logic
    Mongkolkachit, P
    Bhuva, B
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2003, 3 (03) : 89 - 92
  • [49] A new neutron facility for single-event effect testing
    Prokofiev, AV
    Andersson, LO
    Bergmark, T
    Byström, O
    Calén, H
    Einarsson, L
    Ekström, C
    Fransson, J
    Gajewski, K
    Haag, N
    Hartman, T
    Hellbeck, E
    Johansen, T
    Jonsson, O
    Lundström, B
    Pettersson, L
    Reistad, D
    Renberg, PU
    Wessman, D
    Ziemann, V
    Blomgren, J
    Pomp, S
    Österlund, M
    Tippawan, U
    2004 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2004, : 160 - 162
  • [50] Single-event multiple transients in guard-ring hardened inverter chains of different layout designs
    Zhao, Wen
    He, Chaohui
    Chen, Wei
    Chen, Rongmei
    Cong, Peitian
    Zhang, Fengqi
    Wang, Zujun
    Shen, Chen
    Zheng, Lisang
    Guo, Xiaoqiang
    Ding, Lili
    MICROELECTRONICS RELIABILITY, 2018, 87 : 151 - 157
12345