Linear model application for the design of transparent conductive In2O3 electrodes

被引:0
|
作者
Axelevitch, A
Gross, D
Rabinovitch, E
Golan, G
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transparent conductive coatings with high electrical conductivity and maximum optical transparency attracts much attention in recent years. Most of the works published till present in this field were concentrated in the physical analysis and design of thin film coatings. In this paper we present a different approach to the fabrication design of transparent conductive thin films. Instead of analyzing complex physical models of the final product, a mathematical linear model to control the processing stages of these films production is presented. This linear model is based on a mathematical approach which optimize the processing procedure parameters to yield the best coating performance. The main idea in this linear model optimization procedure lies in finding functions extremums using their derivatives and gradients. The Transparent Conductive Oxide (TCO) Indium Oxide thin films (In2O3) were obtained by DC magnetron sputtering from pure Indium Oxide target in an argon atmosphere. The obtained transparent conducting thin films had the following parameters: Transparency in 550 nm wavelength - 90.7 % (including the glass substrate with an absolute transparency of 91.08 %); resistivity of 0.043 Omega . cm for a 2525 Angstrom film. As a result of this work the linear model was found to be a useful instrument for the general fabrication design of thin film systems.
引用
收藏
页码:274 / 277
页数:4
相关论文
共 50 条
  • [21] Ta-doped In2O3 transparent conductive films with high transmittance and low resistance
    Wang, Biao
    Hu, LiMing
    Liu, FengMin
    Qin, Li
    Liu, Yun
    Wang, LiJun
    OPTICA APPLICATA, 2010, 40 (01) : 25 - 31
  • [23] Properties of transparent conductive In2O3:Mo thin films deposited by Channel Spark Ablation
    Huang, L
    Li, XF
    Zhang, Q
    Miao, WN
    Zhang, L
    Yan, XJ
    Zhang, ZJ
    Hua, ZY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (05): : 1350 - 1353
  • [24] Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells
    Koida, Takashi
    Sai, Hitoshi
    Kondo, Michio
    THIN SOLID FILMS, 2010, 518 (11) : 2930 - 2933
  • [25] Limitations of In2O3 as a transparent conducting oxide
    Peelaers, H.
    Kioupakis, E.
    Van de Walle, C. G.
    APPLIED PHYSICS LETTERS, 2019, 115 (08)
  • [26] THE ELECTRONIC EFFECT OF TI4+, ZR4+ AND GE4+ DOPINGS UPON THE PHYSICAL-PROPERTIES OF IN2O3 AND SN-DOPED IN2O3 CERAMICS - APPLICATION TO NEW HIGHLY-TRANSPARENT CONDUCTIVE ELECTRODES
    CAMPET, G
    HAN, SD
    WEN, SJ
    MANAUD, JP
    PORTIER, J
    XU, Y
    SALARDENNE, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 19 (03): : 285 - 289
  • [27] Transparent Conductive Electrodes of β-Ga2O3/Ag/β-Ga2O3 Multilayer for Ultraviolet Emitters
    Kim, Si-Won
    Lee, Hyo-Ju
    Oh, Semi
    Noh, Beom-Rae
    Park, So-Yeon
    Im, Ye-Bin
    Son, Suyeon
    Song, Yong Won
    Kim, Kyoung-Kook
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 19 (10) : 6328 - 6333
  • [28] Influence of post-annealing on the properties of Ta-doped In2O3 transparent conductive films
    Xu Lei
    Wang Rui
    Liu Yong
    Zhang Dan
    Xiao Qi
    CHINESE SCIENCE BULLETIN, 2011, 56 (15): : 1535 - 1538
  • [29] Post-annealing on the Electrical Properties of Ta-doped In2O3 Transparent Conductive Films
    Xu Lei
    Wang Rui
    Xiao Qi
    NEW TRENDS IN MECHANICAL ENGINEERING AND MATERIALS, 2013, 251 : 387 - 391
  • [30] Highly Conductive and Broadband Transparent Zr-Doped In2O3 as Front Electrode for Solar Cells
    Morales-Masis, Monica
    Rucavado, Esteban
    Monnard, Raphael
    Barraud, Loris
    Holovsky, Jakub
    Despeisse, Matthieu
    Boccard, Mathieu
    Ballif, Christophe
    IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 8 (05): : 1202 - 1207