Effects of dopant content on optical and electrical properties of In2O3: W transparent conductive films

被引：0
|
作者：
ZHANG Yuanpeng
机构：
来源：
Rare Metals | 2012年 / 31卷 / 02期
基金：
中国国家自然科学基金;
关键词：
In 2 O 3 : W thin film; doping content; DC magnetron sputtering; optical and electrical properties;
D O I：
暂无
中图分类号：
TB383.2 [];
学科分类号：
070205 ; 080501 ; 1406 ;
摘要：
The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.
引用
收藏
页码：168 / 171
页数：4
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