Effects of dopant content on optical and electrical properties of In2O3: W transparent conductive films

被引：7
|
作者：
Zhang Yuanpeng [1 ]
Li Yuan [1 ]
Li Chunzhi [1 ]
Wang Wenwen [1 ]
Zhang Junying [1 ]
Wang Rongming [1 ]
机构：
[1] Beijing Univ Aeronaut & Astronaut, Sch Phys & Nucl Energy Engn, Beijing 100191, Peoples R China
来源：
RARE METALS | 2012年 / 31卷 / 02期
基金：
中国国家自然科学基金;
关键词：
In2O3: W thin film; doping content; DC magnetron sputtering; optical and electrical properties; THIN-FILMS; OXIDE;
D O I：
10.1007/s12598-012-0485-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The In2O3: W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0x10(-3) Omega center dot cm, highest carrier mobility of 43.7 cm(2)center dot V-1 center dot s(-1) and carrier concentration of 1.4x10(20) cm(-3) was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.
引用
收藏
页码：168 / 171
页数：4
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