Efficiency and reliability of Fowler-Nordheim tunnelling in CMOS floating-gate transistors

被引：9
|
作者：
Rumberg, B. [1 ]
Graham, D. W. [1 ]
机构：
[1] W Virginia Univ, Lane Dept Comp Sci & Elect Engn, Morgantown, WV 26506 USA
来源：
ELECTRONICS LETTERS | 2013年 / 49卷 / 23期
基金：
美国国家科学基金会;
关键词：
CMOS integrated circuits;
D O I：
10.1049/el.2013.2401
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Floating-gate transistors are increasingly used for digital and/or analogue non-volatile memory in standard CMOS integrated circuits. The mask design of the floating-gate's tunnelling junction, where erasure and/or writing occur, is examined. Aided by static and transient tunnelling current measurements for a variety of tunnelling junctions, recommendations for constructing these junctions to minimise the duration, power consumption and oxide degradation of programming are presented.
引用
收藏
页码：1484 / 1486
页数：2
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