Efficiency and reliability of Fowler-Nordheim tunnelling in CMOS floating-gate transistors

被引：9

作者：

Rumberg, B. ^{[1
]}

Graham, D. W. ^{[1
]}

机构：

[1] W Virginia Univ, Lane Dept Comp Sci & Elect Engn, Morgantown, WV 26506 USA

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 23期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1049/el.2013.2401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Floating-gate transistors are increasingly used for digital and/or analogue non-volatile memory in standard CMOS integrated circuits. The mask design of the floating-gate's tunnelling junction, where erasure and/or writing occur, is examined. Aided by static and transient tunnelling current measurements for a variety of tunnelling junctions, recommendations for constructing these junctions to minimise the duration, power consumption and oxide degradation of programming are presented.

引用

页码：1484 / 1486

页数：2

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