Growth phenomena of Si and Si/Ge nanowires on Si(111) by molecular beam epitaxy

被引：114

作者：

Zakharov, ND ^{[1
]}

Werner, P ^{[1
]}

Gerth, G ^{[1
]}

Schubert, L ^{[1
]}

Sokolov, L ^{[1
]}

Gösele, U ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06121 Halle, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 290卷 / 01期

关键词：

nanostructures; molecular beam epitaxy; semiconducting silicon compounds;

D O I：

10.1016/j.jcrysgro.2005.12.096

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the formation of Si and SiGe nanowires (NW) by molecular beam epitaxy (MBE) initiated via gold droplets. The MBE growth behavior essentially differs from the classical vapor-liquid-solid mechanism (VLS) observed in the case of NW growth by chemical vapor deposition (CVD). From a thermodynamic point of view, the driving force for the NW growth by MBE is related to the supersaturation determined by relaxation of elastic energy generated in Si substrate due to Au intrusion. Adding Ge decreases the growth rate of Si NW or can even result in its dissolution. This effect can be interpreted in terms of elastic energy accumulation because of differences in atomic radii of Si and Ge. This effect has a general influence on the formation of NW heterostructures. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：6 / 10

页数：5

共 50 条

[41] Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy
Vajpeyi, A. P.
Ajagunna, A. O.
Tsiakatouras, G.
Adikimenakis, A.
Iliopoulos, E.
Tsagaraki, K.
Androulidaki, M.
Georgakilas, A.
MICROELECTRONIC ENGINEERING, 2009, 86 (4-6) : 812 - 815
[42] Nucleation and growth of Ge on Si(111) in solid phase epitaxy
Suzumura, I
Okada, M
Muto, A
Torige, Y
Ikeda, H
Sakai, A
Zaima, S
Yasuda, Y
THIN SOLID FILMS, 2000, 369 (1-2) : 116 - 120
[43] Heteroepitaxial Growth and Faceting of Ge Nanowires on Si(111) by Electron-Beam Evaporation
Pecora, Emanuele Francesco
Irrera, Alessia
Artoni, Pietro
Boninelli, Simona
Bongiorno, Corrado
Spinella, Corrado
Priolo, Francesco
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (05) : K53 - K55
[44] Growth of SiC layers on (111) Si by solid source molecular beam epitaxy
Pezoldt, J
Stauden, T
Cimalla, V
Ecke, G
Romanus, H
Eichhorn, G
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 251 - 254
[45] Growth of self-assembled and position-controlled InN nanowires on Si (111) by molecular beam epitaxy
Weiszer, Saskia
Zeidler, Andreas
de la Mata, Maria
Stutzmann, Martin
JOURNAL OF CRYSTAL GROWTH, 2019, 510 : 56 - 64
[46] The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy
Li, Kexue
Zhang, Jian
Tang, Jilong
Kang, Yubin
Lin, Fengyuan
Hou, Xiaobing
Wei, Zhipeng
Hao, Qun
COATINGS, 2023, 13 (07)
[47] Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)
Zhang, Lichun
Geng, Xuewen
Zha, Guowei
Xu, Jianxing
Wei, Sihang
Ma, Ben
Chen, Zesheng
Shang, Xiangjun
Ni, Haiqiao
Niu, Zhichuan
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 52 : 68 - 74
[48] Study of the initial growth process of ZnSe on Si(111) by molecular beam epitaxy
MendezGarcia, VH
LopezLopez, M
HernandezCalderon, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB): : L1153 - L1156
[49] Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy
Karmann, S
Schenk, HPD
Kaiser, U
Fissel, A
Richter, W
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 228 - 232
[50] Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)
Volkov, Roman
Borgardt, Nikolai, I
Konovalov, Oleg, V
Fernandez-Garrido, Sergio
Brandt, Oliver
Kaganer, Vladimir M.
NANOSCALE ADVANCES, 2022, 4 (02): : 562 - 572

← 1 2 3 4 5 →