Growth phenomena of Si and Si/Ge nanowires on Si(111) by molecular beam epitaxy

被引：114

作者：

Zakharov, ND ^{[1
]}

Werner, P ^{[1
]}

Gerth, G ^{[1
]}

Schubert, L ^{[1
]}

Sokolov, L ^{[1
]}

Gösele, U ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06121 Halle, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 290卷 / 01期

关键词：

nanostructures; molecular beam epitaxy; semiconducting silicon compounds;

D O I：

10.1016/j.jcrysgro.2005.12.096

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the formation of Si and SiGe nanowires (NW) by molecular beam epitaxy (MBE) initiated via gold droplets. The MBE growth behavior essentially differs from the classical vapor-liquid-solid mechanism (VLS) observed in the case of NW growth by chemical vapor deposition (CVD). From a thermodynamic point of view, the driving force for the NW growth by MBE is related to the supersaturation determined by relaxation of elastic energy generated in Si substrate due to Au intrusion. Adding Ge decreases the growth rate of Si NW or can even result in its dissolution. This effect can be interpreted in terms of elastic energy accumulation because of differences in atomic radii of Si and Ge. This effect has a general influence on the formation of NW heterostructures. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：6 / 10

页数：5

共 50 条

[21] GROWTH OF (111) GAAS ON (111) SI USING MOLECULAR-BEAM EPITAXY
RADHAKRISHNAN, G
LIU, J
GRUNTHANER, F
KATZ, J
MORKOC, H
MAZUR, J
JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1596 - 1598
[22] Growth of GaAs nanowires on Si substrates using a molecular beam epitaxy
Ihn, Soo-Ghang
Song, Jong-In
Kim, Young-Hun
Lee, Jeong Yong
Ahn, Il-Ho
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2007, 6 (03) : 384 - 389
[23] COLUMNAR GROWTH OF COSI2 ON SI(111), SI(100) AND SI(110) BY MOLECULAR-BEAM EPITAXY
FATHAUER, RW
NIEH, CW
XIAO, QF
HASHIMOTO, S
THIN SOLID FILMS, 1990, 184 : 335 - 342
[24] Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane
Chen, J.
Steckl, A.J.
Loboda, M.J.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (03):
[25] Growth of AlGaN on Si(111) by gas source molecular beam epitaxy
Nikishin, SA
Faleev, NN
Zubrilov, AS
Antipov, VG
Temkin, H
APPLIED PHYSICS LETTERS, 2000, 76 (21) : 3028 - 3030
[26] Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane
Chen, J
Steckl, AJ
Loboda, MJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1305 - 1308
[27] Growth of Ge nanoislands on Si (001) using molecular beam epitaxy
Singha, R. K.
Das, S.
Das, K.
Dhar, A.
Ray, S. K.
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 205 - 207
[28] LEED STUDIES OF SI MOLECULAR-BEAM EPITAXY ONTO SI(111)
HORN, M
HENZLER, M
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 428 - 433
[29] Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy
Bastiman, Faebian
Kuepers, Hanno
Somaschini, Claudio
Geelhaar, Lutz
NANOTECHNOLOGY, 2016, 27 (09)
[30] Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy
Reznik, R. R.
Cirlin, G. E.
Shtrom, I. V.
Khrebtov, A. I.
Soshnikov, I. P.
Kryzhanovskaya, N. V.
Moiseev, E. I.
Zhukov, A. E.
TECHNICAL PHYSICS LETTERS, 2018, 44 (02) : 112 - 114

← 1 2 3 4 5 →