Temperature-dependent characteristics of non-volatile transistor memory based on a polypeptide

被引：12

作者：

Liang, Lijuan ^{[1
]}

Fukushima, Tomoo ^{[1
]}

Nakamura, Kazuki ^{[1
]}

Uemura, Sei ^{[2
]}

Kamata, Toshihide ^{[2
]}

Kobayashi, Norihisa ^{[1
]}

机构：

[1] Chiba Univ, Grad Sch Adv Integrat Sci, Dept Image & Mat Sci, Inage Ku, Chiba 2638522, Japan

[2] Natl Inst Adv Ind Sci & Technol, Flexible Elect Res Ctr, Tsukuba, Ibaraki 3058565, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 05期

关键词：

ORGANIC TRANSISTORS; POLYMER; PERFORMANCE; DEVICES; COPOLYMER; INSULATOR; CIRCUITS; FET;

D O I：

10.1039/c3tc31777c

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A thin-film transistor (TFT) non-volatile memory (NVM) device was fabricated using a-helix poly(gamma-methyl-L-glutamate) (PMLG) as a ferroelectric layer. In order to study the mechanism of memory driving, the temperature dependence of transfer characteristics and memory performance was investigated. It was revealed that the cooperative movement of the large dipole moment along the rod-like main chain and that of the small dipole moment in the side chain played an important role in the memory function.

引用

下载

页码：879 / 883

页数：5

共 50 条

[31] Silicon-on-insulator non-volatile field-effect transistor memory
Schwank, JR
Shaneyfelt, MR
Meisenheimer, TL
Draper, BL
Vanhesden, K
Fleetwood, DM
MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 253 - 258
[32] Dependable Non-Volatile Memory
Martens, Arthur
Scholz, Rouven
Lindow, Phil
Lehnfeld, Niklas
Kastner, Marc A.
Kapitza, Ruediger
SYSTOR'18: PROCEEDINGS OF THE 11TH ACM INTERNATIONAL SYSTEMS AND STORAGE CONFERENCE, 2018, : 1 - 12
[33] Nanocrystals for non-volatile memory
不详
ELECTRONICS WORLD, 2000, 106 (1776): : 914 - 914
[34] A nanowire transistor for high performance logic and terabit non-volatile memory devices
Lee, Hyunjin
Ryu, Seong-Wan
Han, Jin-Woo
Yu, Lee-Eun
Im, Maesoon
Kim, Chungjin
Kim, Sungho
Lee, Eujune
Kim, Kuk-Hwan
Kim, Ju-Hyun
Bae, Dong-Il
Jeon, Sang Cheol
Kim, Kwang Hee
Lee, Gi Sung
Oh, Joe Sub
Park, Yun Chang
Bae, Woo Ho
Yoo, Jung Jae
Yang, Jun Mo
Lee, Hee Mok
Choi, Yang-Kyu
2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, : 144 - +
[35] NON-VOLATILE SEMICONDUCTOR MEMORY
KLEIN, R
TCHON, WE
MICROPROCESSING AND MICROPROGRAMMING, 1982, 10 (2-3): : 129 - 138
[36] Overview of one transistor type of hybrid organic ferroelectric non-volatile memory
Young Tea Chun
Daping Chu
Instrumentation, 2015, 2 (01) : 65 - 74
[37] Temperature Effects on a Non-Volatile Memory Device with Ferroelectric Capacitor
John, Caroline S.
Macleod, Todd C.
Evans, Joe
Ho, Fat D.
INTEGRATED FERROELECTRICS, 2014, 157 (01) : 23 - 30
[38] Non-volatile memory concepts based on resistive switching
Waser, R.
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 2007, : 43 - 45
[39] Non-volatile memory devices based on Ge nanocrystals
Vasilache, Dan
Cismaru, Alina
Dragoman, Mircea
Stavarache, Ionel
Palade, Catalin
Lepadatu, Ana-Maria
Ciurea, Magdalena Lidia
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (02): : 255 - 259
[40] Fast Persistent Heap Based on Non-Volatile Memory
Zhang, Wenzhe
Lu, Kai
Wang, Xiaoping
Jian, Jie
IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS, 2017, E100D (05): : 1035 - 1045

← 1 2 3 4 5 →