Reducing inhomogeneity in the dynamic properties of quantum dots via self-aligned plasmonic cavities

被引：0
|
作者：
Demory, Brandon [1 ]
Hill, Tyler A. [2 ]
Teng, Chu-Hsiang [1 ]
Deng, Hui [2 ]
Ku, P. C. [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
来源：
NANOTECHNOLOGY | 2018年 / 29卷 / 01期
基金：
美国国家科学基金会;
关键词：
quantum efficiency; plasmonic coupling; metallic cavity; quantum dots; III-nitride; SINGLE-PHOTON EMISSION; ENHANCEMENT; EFFICIENCY; SILVER;
D O I：
10.1088/1361-6528/aa994c
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A plasmonic cavity is shown to greatly reduce the inhomogeneity of dynamic optical properties such as quantum efficiency and radiative lifetime of InGaN quantum dots. By using an open-top plasmonic cavity structure, which exhibits a large Purcell factor and antenna quantum efficiency, the resulting quantum efficiency distribution for the quantum dots narrows and is no longer limited by the quantum dot inhomogeneity. The standard deviation of the quantum efficiency can be reduced to 2% while maintaining the overall quantum efficiency at 70%, making InGaN quantum dots a viable candidate for high-speed quantum cryptography and random number generation applications.
引用
收藏
页数：8
相关论文
共 50 条
  • [21] SOI-based silicon quantum dots contacted by self-aligned nano-electrodes
    Wolf, Conrad R.
    Ladenburger, Andreas
    Enchelmaier, Rainer
    Thonke, Klaus
    Sauer, Rolf
    GROUP IV SEMICONDUCTOR NANOSTRUCTURES-2006, 2007, 958 : 269 - +
  • [22] Laterally self-aligned InGaAs/GaAs quantum dots fabricated by using a multilayer stacking technique
    Kim, JO
    Lee, SJ
    Noh, SK
    Ryu, YH
    Choi, SM
    Choe, JW
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (01) : 94 - 99
  • [23] Non-volatile Si quantum memory with self-aligned doubly-stacked dots
    Ohba, R
    Sugiyama, N
    Uchida, K
    Koga, J
    Toriumi, A
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 313 - 316
  • [24] Study of electron transport characteristics through self-aligned Si-based quantum dots
    Makihara, Katsunori
    Ikeda, Mitsuhisa
    Miyazaki, Seiichi
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (10)
  • [25] Photoluminescence Characteristics of Self-Aligned InGaAs Quantum Dots Fabricated by Using Atomic Layer Epitaxy
    Kim, J. O.
    Lee, S. J.
    Noh, S. K.
    Choe, J. W.
    Kang, T. W.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (04) : 2100 - 2104
  • [26] Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication
    Wan, Weiwei
    Lin, Liang
    Xu, Yelong
    Guo, Xu
    Liu, Xiaoping
    Ge, Haixiong
    Lu, Minghui
    Cui, Bo
    Chen, Yanfeng
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 116 (02): : 657 - 662
  • [27] Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication
    Weiwei Wan
    Liang Lin
    Yelong Xu
    Xu Guo
    Xiaoping Liu
    Haixiong Ge
    Minghui Lu
    Bo Cui
    Yanfeng Chen
    Applied Physics A, 2014, 116 : 657 - 662
  • [28] Self-aligned silicon quantum wires on Ag(110)
    Leandri, C
    Le Lay, G
    Aufray, B
    Girardeaux, C
    Avila, J
    Dávila, ME
    Asensio, MC
    Ottaviani, C
    Cricenti, A
    SURFACE SCIENCE, 2005, 574 (01) : L9 - L15
  • [29] Self-aligned plasmonic-nanofluidic system by continuous laser manufacturing
    Yu, Yizhen
    Yang, Bo
    Huang, Huijuan
    Wang, Rui
    APPLIED PHYSICS LETTERS, 2025, 126 (11)
  • [30] Characterization of Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots
    Takami, Hiroki
    Makihara, Katsunori
    Ikeda, Mitsuhisa
    Miyazaki, Seiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
12345