A plasmonic cavity is shown to greatly reduce the inhomogeneity of dynamic optical properties such as quantum efficiency and radiative lifetime of InGaN quantum dots. By using an open-top plasmonic cavity structure, which exhibits a large Purcell factor and antenna quantum efficiency, the resulting quantum efficiency distribution for the quantum dots narrows and is no longer limited by the quantum dot inhomogeneity. The standard deviation of the quantum efficiency can be reduced to 2% while maintaining the overall quantum efficiency at 70%, making InGaN quantum dots a viable candidate for high-speed quantum cryptography and random number generation applications.
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Toshiba Co Ltd, Corp Res & Dev Ctr, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, JapanToshiba Co Ltd, Corp Res & Dev Ctr, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan
Ohba, R
Sugiyama, N
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机构:Toshiba Co Ltd, Corp Res & Dev Ctr, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan
Sugiyama, N
Uchida, K
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机构:Toshiba Co Ltd, Corp Res & Dev Ctr, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan
Uchida, K
Koga, J
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机构:Toshiba Co Ltd, Corp Res & Dev Ctr, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan
Koga, J
Toriumi, A
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机构:Toshiba Co Ltd, Corp Res & Dev Ctr, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan
机构:
Kolon Ind Inc, Elect Mat Res Inst, Yongin 446797, South KoreaYonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South Korea
Lee, Won-Kyu
Hwang, Seung Jun
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Korea Inst Sci & Technol, Fuel Cell Res Ctr, Seoul 136791, South KoreaYonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South Korea
Hwang, Seung Jun
Cho, Min-Jae
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Yonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South KoreaYonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South Korea
Cho, Min-Jae
Park, Hong-Gyu
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Yonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South KoreaYonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South Korea
Park, Hong-Gyu
Han, Jin-Woo
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Samsung Corning Precis Mat Co Ltd, New Business R&D Ctr, Elect Mat Lab, Gumi Si, Gyeongsangbuk D, South KoreaYonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South Korea
Han, Jin-Woo
Song, Seogjeong
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Kolon Ind Inc, Elect Mat Res Inst, Yongin 446797, South KoreaYonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South Korea
Song, Seogjeong
Jang, Jong Hyun
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Korea Inst Sci & Technol, Fuel Cell Res Ctr, Seoul 136791, South KoreaYonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South Korea
Jang, Jong Hyun
Seo, Dae-Shik
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Yonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South KoreaYonsei Univ, Dept Elect & Elect Engn, Informat Display Device Lab, Seoul 120749, South Korea