High quantum efficiency (Al)GaAs nanowires for optoelectronic devices

被引：0
|
作者：
Mokkapati, S. [1 ]
Nian-Jiang [1 ]
Saxena, D. [1 ]
Tan, H. H. [1 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
来源：
2014 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES | 2014年
关键词：
III-V semiconductor; nanowire; optoelectronic devices; plasmonics;
D O I：
10.1109/SUM.2014.14
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al)GaAs nanowires.
引用
收藏
页码：13 / 14
页数：2
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