A position sensitive detector based on an ITO-Si structure

被引：9

作者：

Georgiev, SS ^{[1
]}

Sueva, D ^{[1
]}

Nedev, N ^{[1
]}

机构：

[1] UNIV SOFIA, FAC PHYS, BU-1126 SOFIA, BULGARIA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 23期

关键词：

D O I：

10.1088/0953-8984/9/23/023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

One- and two-dimensional position sensitive detectors based on an ITO-pSi structure have been fabricated and studied. The experimentally measured linear dependence between the photovoltage response and the light spot position is explained by a model in which the electric field in silicon in the lateral direction (E-Si) is assumed to be constant. It has been shown that E-Si is inversely proportional to the electron diffusion length. Using the experimental data the electron diffusion length is estimated to be about 1 cm.

引用

页码：4995 / 5001

页数：7

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