A position sensitive detector based on an ITO-Si structure

被引：9
|
作者：
Georgiev, SS [1 ]
Sueva, D [1 ]
Nedev, N [1 ]
机构：
[1] UNIV SOFIA, FAC PHYS, BU-1126 SOFIA, BULGARIA
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 23期
关键词：
D O I：
10.1088/0953-8984/9/23/023
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
One- and two-dimensional position sensitive detectors based on an ITO-pSi structure have been fabricated and studied. The experimentally measured linear dependence between the photovoltage response and the light spot position is explained by a model in which the electric field in silicon in the lateral direction (E-Si) is assumed to be constant. It has been shown that E-Si is inversely proportional to the electron diffusion length. Using the experimental data the electron diffusion length is estimated to be about 1 cm.
引用
收藏
页码：4995 / 5001
页数：7
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