Carrier transport in a position sensitive detector based on an ITO/a-Si:H/Pd structure

被引：12
|
作者：
Nedev, N
Georgiev, SS
Sueva, D
Smirnov, N
Toneva, A
机构：
[1] Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[3] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2001年 / 93卷 / 01期
关键词：
position sensitive detectors; amorphous silicon; photodetector; heterostructure;
D O I：
10.1016/S0924-4247(01)00625-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The carrier transport in ITO/a-Si:H/Pd position sensitive detector is studied experimentally and numerically. Hydrogenated amorphous silicon deposited by the homogeneous chemical vapour deposition process (HOMOCVD) is used as an active layer, A method which allows estimation of the a-Si:H electron trap density (N-t) and the effective electron diffusion length (L-n) in ITO/a-Si:H/Pd structure is presented. The method is based on the comparison between the experimentally measured dependencies and the calculated ones. For N-t and L-n the values: N-t = 7 x 10(15) cm(-3) and L-n = 0.5 cm are obtained. The relatively large value of L-n is a result of the separation of light generated carriers and the suppression of their recombination by the electric field in the a-Si:H layer. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：48 / 51
页数：4
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