Flash sintering feasibility study and localized densification in boron carbide

被引：5

作者：

Rosenberger, Andrew ^{[1
]}

Brennan, Raymond E. ^{[2
]}

Fry, Aubrey L. ^{[3
]}

机构：

[1] Bennett Aerosp, 6300 Rodman Rd, Aberdeen Proving Ground, MD 21005 USA

[2] CCDC Army Res Lab, Aberdeen Proving Ground, MD USA

[3] Penn State Univ, Dept Mat Sci & Engn, State Coll, PA USA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2021年 / 104卷 / 08期

关键词：

boron carbide; densification; Field Assisted Sintering Technology (FAST);

D O I：

10.1111/jace.17833

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The feasibility of flash sintering boron carbide (B4C) was investigated using a direct current (DC) electric field across different electrodes, field strengths, and thermal profiles. Flash behavior was observed at furnace temperatures as low as 386 degrees C with field strengths of 68-278 V/cm, but only a small channel of the specimen was densified due to hot spot effects. Application of a 2.2 V/cm center dot s voltage ramp at a constant temperature of 550 degrees C caused uniform heating, but at temperatures too low for sintering. Scalable densification of B4C at low furnace temperatures with flash sintering is theorized to be possible by applying a higher current density through power supply or specimen modifications.

引用

页码：3823 / 3827

页数：5

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