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Flash sintering feasibility study and localized densification in boron carbide
被引:5
|作者:
Rosenberger, Andrew
[1
]
Brennan, Raymond E.
[2
]
Fry, Aubrey L.
[3
]
机构:
[1] Bennett Aerosp, 6300 Rodman Rd, Aberdeen Proving Ground, MD 21005 USA
[2] CCDC Army Res Lab, Aberdeen Proving Ground, MD USA
[3] Penn State Univ, Dept Mat Sci & Engn, State Coll, PA USA
关键词:
boron carbide;
densification;
Field Assisted Sintering Technology (FAST);
D O I:
10.1111/jace.17833
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
The feasibility of flash sintering boron carbide (B4C) was investigated using a direct current (DC) electric field across different electrodes, field strengths, and thermal profiles. Flash behavior was observed at furnace temperatures as low as 386 degrees C with field strengths of 68-278 V/cm, but only a small channel of the specimen was densified due to hot spot effects. Application of a 2.2 V/cm center dot s voltage ramp at a constant temperature of 550 degrees C caused uniform heating, but at temperatures too low for sintering. Scalable densification of B4C at low furnace temperatures with flash sintering is theorized to be possible by applying a higher current density through power supply or specimen modifications.
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页码:3823 / 3827
页数:5
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