Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

被引：35

作者：

Roucka, R ^{[1
]}

Tolle, J

Chizmeshya, AVG

Crozier, PA

Poweleit, CD

Smith, DJ

Tsong, IST

Kouvetakis, J

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

[3] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.88.206102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

引用

页码：4 / 206102

页数：4

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