PbS Quantum Dot Photoluminescence Quenching Induced By An Applied Bias

被引：0

作者：

Sun, L. ^{[1
]}

Bartnik, A. ^{[1
]}

Hyun, B. ^{[1
]}

Wise, F. ^{[1
]}

Reed, J. ^{[2
]}

Slinker, J. ^{[2
]}

Malliaras, G. ^{[2
]}

Zhong, Y. ^{[3
]}

Bao, L. ^{[3
]}

Abruna, H. ^{[3
]}

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Cornell Univ, Dept Chem, Ithaca, NY 14853 USA

来源：

2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate that a DC voltage applied on a PbS quantum dot embedded organic light emitting diode can partially quench the quantum dot photoluminescence and propose a way to avoid this quenching. (C)2007 Optical Society of America

引用

页码：1172 / +

页数：2

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