PbS Quantum Dot Photoluminescence Quenching Induced By An Applied Bias

被引：0
|
作者：
Sun, L. [1 ]
Bartnik, A. [1 ]
Hyun, B. [1 ]
Wise, F. [1 ]
Reed, J. [2 ]
Slinker, J. [2 ]
Malliaras, G. [2 ]
Zhong, Y. [3 ]
Bao, L. [3 ]
Abruna, H. [3 ]
机构：
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[3] Cornell Univ, Dept Chem, Ithaca, NY 14853 USA
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate that a DC voltage applied on a PbS quantum dot embedded organic light emitting diode can partially quench the quantum dot photoluminescence and propose a way to avoid this quenching. (C)2007 Optical Society of America
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页码：1172 / +
页数：2
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