A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA

被引：0
|
作者：
Sung, Woongje [1 ]
Baliga, B. J. [1 ]
Huang, Alex Q. [1 ]
机构：
[1] N Carolina State Univ, NSF FREEDM Syst Ctr, Raleigh, NC 27695 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
4H-SiC; fault isolation device; power distribution system; field controlled diode; field controlled thyristor; gating technique; cascode circuit; short circuit safe operating area;
D O I：
10.4028/www.scientific.net/MSF.717-720.1045
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper aims to introduce a solid-state fault isolation device (FID) for the short circuit protection application in the power distribution systems. The key performance of a FID is to have a low on-state loss and a strong short circuit safe operating area (SCSOA). As a FID, a novel 15kV 4H-SiC field controlled diode (FCD) with a p+buried layer is proposed to provide an improved trade-off between the on-state forward voltage drop and the saturation current. Dynamic response to the fault and the application example of the proposed FCD are described in this paper.
引用
收藏
页码：1045 / 1048
页数：4
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