Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactors

被引：0
|
作者：
Mauceri, M. [1 ]
Pecora, A. [1 ]
Litrico, G. [1 ]
Vecchio, C. [1 ]
Puglisi, M. [1 ]
Crippa, D. [2 ]
机构：
[1] Epitaxial Technol Ctr, ZI Pantano dArci, I-95121 Catania, Italy
[2] LPE, I-20021 Milan, Italy
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 08期
关键词：
LAYER GROWTH; SURFACE-MORPHOLOGY; LEAKAGE CURRENT; POWER DEVICES; SILICON; TCS;
D O I：
10.1149/2.011308jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The latest results on 100 mm 2 degrees off and 150 mm SiC-4H epitaxial process using chlorinated chemistry are illustrated in this paper. On 2 degrees off substrates a reduced step-bunching epi surface with a roughness of <0, 27 nm was achieved and the reduction of SSSF and BSSF was also noticed. SiC 150 mm epitaxy process was demonstrated showing an epi thickness dispersion of +/- 0.9% and a doping dispersion of +/- 9.1%. (C) 2013 The Electrochemical Society. All rights reserved.
引用
收藏
页码：N3051 / N3054
页数：4
相关论文
共 50 条
  • [1] High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor
    Gong, Xiaoliang
    Xie, Tianle
    Hu, Fan
    Li, Ping
    Ba, Sai
    Wang, Liancheng
    Zhu, Wenhui
    COATINGS, 2024, 14 (07)
  • [2] Recent progress of SiC hot-wall epitaxy and its modeling
    Nishizawa, Shin-ichi
    Pons, Michel
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 129 - 134
  • [3] Growth and characterization of 4H-SiC by horizontal hot-wall CVD
    Sun, GS
    Gao, X
    Wang, L
    Zhao, WS
    Zeng, YP
    Li, JM
    SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 89 - 92
  • [4] High growth rate (up to 20 μm/h) SiC epitaxy in a horizontal hot-wall reactor
    Zhang, J
    Mazzola, J
    Hoff, C
    Koshka, Y
    Casady, J
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 77 - 80
  • [5] Progress in cold-wall epitaxy for 4H-SiC high-power devices
    Rowland, L. B.
    Dunne, G. T.
    Fronheiser, J.
    Soloviev, S.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 141 - +
  • [6] VIOLET-LIGHT-EMITTING SIC-4H DIODES
    DMITRIEV, VA
    KOGAN, LM
    MOROZENKO, YV
    TSARENKOV, BV
    CHELNOKOV, VE
    CHERENKOV, AE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (01): : 23 - 25
  • [7] High epitaxial growth rate of 4H-SiC using horizontal hot-wall CVD
    Myers, R. L.
    Shishkin, Y.
    Kordina, O.
    Haselbarth, I.
    Saddow, S. E.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 187 - 190
  • [8] ABSORPTION-BANDS OF SIC-4H IN FAR INFRARED REGION
    ILIN, MA
    RASHEVSK.EP
    FIZIKA TVERDOGO TELA, 1972, 14 (08): : 2477 - &
  • [9] Preparation of SiC thin film thermistor by hot wall epitaxy
    Muramatsu, K
    Sakamoto, T
    Asakura, M
    Hasegawa, K
    Yamada, N
    Nakashima, S
    Ishida, A
    Kuwabara, H
    Nakanishi, Y
    Fujiyasu, H
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 821 - 824
  • [10] SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor
    Leone, S.
    Mauceri, M.
    Pistone, G.
    Abbondanza, G.
    Portuese, F.
    Abagnale, G.
    Valente, G. L.
    Crippa, D.
    Barbera, M.
    Reitano, R.
    Foti, G.
    La Via, F.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 179 - 182
12345