Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactors

被引：0
|
作者：
Mauceri, M. [1 ]
Pecora, A. [1 ]
Litrico, G. [1 ]
Vecchio, C. [1 ]
Puglisi, M. [1 ]
Crippa, D. [2 ]
机构：
[1] Epitaxial Technol Ctr, ZI Pantano dArci, I-95121 Catania, Italy
[2] LPE, I-20021 Milan, Italy
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 08期
关键词：
LAYER GROWTH; SURFACE-MORPHOLOGY; LEAKAGE CURRENT; POWER DEVICES; SILICON; TCS;
D O I：
10.1149/2.011308jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The latest results on 100 mm 2 degrees off and 150 mm SiC-4H epitaxial process using chlorinated chemistry are illustrated in this paper. On 2 degrees off substrates a reduced step-bunching epi surface with a roughness of <0, 27 nm was achieved and the reduction of SSSF and BSSF was also noticed. SiC 150 mm epitaxy process was demonstrated showing an epi thickness dispersion of +/- 0.9% and a doping dispersion of +/- 9.1%. (C) 2013 The Electrochemical Society. All rights reserved.
引用
收藏
页码：N3051 / N3054
页数：4
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