Computation of Threshold Voltage Shift in Submicron Heterostructure MOSFET

被引：0
|
作者：
Mukhopadhyay, Swarnav [1 ]
Deyasi, Arpan [2 ]
机构：
[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata, India
[2] RCC Inst Informat Technol, Dept Elect & Commun Engn, Kolkata, India
来源：
2019 INTERNATIONAL CONFERENCE ON OPTO-ELECTRONICS AND APPLIED OPTICS (OPTRONIX 2019) | 2019年
关键词：
Threshold voltage; Shift of threshold; Structural parameters; Doping concentration; Flatband voltage;
D O I：
10.1109/optronix.2019.8862327
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Threshold voltage of submicron heterostructure MOSFET is analytically calculated as a function of channel length based on a novel formulated model. Thickness of the dielectric slab, doping concentration of the substrate, and applied horizontal bias are tailored within practical limit to compute the shift of threshold, after validating result for conventional MOSFET. Two-dimensional Poisson's equation is analytically solved for this purpose, and better tuning is observed for nanometric device dimension. Simulated observations have greater for current computation and subthreshold slope evaluation for the hetero-device.
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收藏
页数：4
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