Computation of Threshold Voltage Shift in Submicron Heterostructure MOSFET

被引：0
|
作者：
Mukhopadhyay, Swarnav [1 ]
Deyasi, Arpan [2 ]
机构：
[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata, India
[2] RCC Inst Informat Technol, Dept Elect & Commun Engn, Kolkata, India
来源：
2019 INTERNATIONAL CONFERENCE ON OPTO-ELECTRONICS AND APPLIED OPTICS (OPTRONIX 2019) | 2019年
关键词：
Threshold voltage; Shift of threshold; Structural parameters; Doping concentration; Flatband voltage;
D O I：
10.1109/optronix.2019.8862327
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Threshold voltage of submicron heterostructure MOSFET is analytically calculated as a function of channel length based on a novel formulated model. Thickness of the dielectric slab, doping concentration of the substrate, and applied horizontal bias are tailored within practical limit to compute the shift of threshold, after validating result for conventional MOSFET. Two-dimensional Poisson's equation is analytically solved for this purpose, and better tuning is observed for nanometric device dimension. Simulated observations have greater for current computation and subthreshold slope evaluation for the hetero-device.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET
    Ananthan, Venkat
    Yang, Rongsheng
    Mouli, Chandra
    2008 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (WMED), 2008, : 9 - 11
  • [32] By Using Grey System and Neural-Fuzzy Network Methods to Obtain the Threshold Voltage of Submicron n-MOSFET DUTs
    Chen, Shen-Li
    Shu, Dun-Ying
    2015 12TH INTERNATIONAL CONFERENCE ON FUZZY SYSTEMS AND KNOWLEDGE DISCOVERY (FSKD), 2015, : 501 - 505
  • [33] A test circuit for measuring MOSFET threshold voltage mismatch
    Terada, K
    Eimitsu, M
    Fukeda, K
    SOLID-STATE ELECTRONICS, 2005, 49 (05) : 818 - 824
  • [34] CONCEPTION OF HEMTS THRESHOLD VOLTAGE BASED ON THE MOSFET MODEL
    OLMOS, A
    REINA, R
    CHARRY, E
    SOLID-STATE ELECTRONICS, 1995, 38 (05) : 1109 - 1112
  • [35] MOSFET threshold voltage: Definition, extraction, and some applications
    Siebel, Osmar Franca
    Schneider, Marcio Cherem
    Galup-Montoro, Carlos
    MICROELECTRONICS JOURNAL, 2012, 43 (05) : 329 - 336
  • [36] Modeling of the threshold voltage variation for a stressed submicronic MOSFET
    Bouhdada, A
    Marrakh, R
    ICM 2001: 13TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, 2001, : 27 - 30
  • [37] PHYSICAL-TECHNOLOGICAL MODEL OF A MOSFET THRESHOLD VOLTAGE
    AFONIN, NN
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1991, 34 (03): : 47 - 52
  • [38] The quantum effects in MOSFET's: Threshold voltage creep
    Quan, WY
    Kim, DM
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 901 - 904
  • [39] SOI-MOSFET Threshold-Voltage Characteristics
    S. M. Zakharov
    Russian Microelectronics, 2003, 32 (1) : 1 - 10
  • [40] AN ANALYTICAL EXPRESSION FOR THE THRESHOLD VOLTAGE OF A SMALL GEOMETRY MOSFET
    AKERS, LA
    SOLID-STATE ELECTRONICS, 1981, 24 (07) : 621 - 627
12345