Analysis and Design of Subthreshold Leakage Power-Aware Ripple Carry Adder at Circuit-Level using 90nm Technology

被引:0
|
作者
Amuthavalli, G. [1 ]
Gunasundari, R. [1 ]
机构
[1] Pondicherry Engn Coll, Dept ECE, Pondicherry, India
关键词
Subthreshold leakage power; Ripple Carry Adder; circuit-level; Short Pulse power gating; MTCMOS; Cadence GPDK090;
D O I
10.1016/j.procs.2015.04.149
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The design space of Wireless Sensor Network mainly focuses on power-aware circuits. As the event-triggering nature of the circuit places itself in Standby mode for longer time, the leakage power shoots up and increases its power consumption. Out of many leakage components, subthreshold leakage power (P-sub_leak) is the dominant one, which is reduced by the proposed technique called Short-Pulse Power Gated Approach (SPOGA). The adder is the basic digital subsystem in the signal processing blocks and Ripple Carry Adder (RCA) is analyzed in the context of P-sub_leak at circuit-level of abstraction using Cadence GPDK090. The P-sub_leak reduces significantly with the 35% to 40% leakage savings in comparison with conventional and Multi-Threshold CMOS (MTCMOS) based RCA. (C) 2015 The Authors. Published by Elsevier B.V.
引用
收藏
页码:660 / 665
页数:6
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