A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

被引：197
|
作者：
Guan, Ximeng [1 ,2 ]
Yu, Shimeng [1 ,2 ]
Wong, H. -S. Philip [1 ,2 ]
机构：
[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 10期
基金：
美国国家科学基金会;
关键词：
Compact model; resistive random access memory (RRAM) conducting filament; resistive switching; temperature; variation; DEVICE;
D O I：
10.1109/LED.2012.2210856
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfOx-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.
引用
收藏
页码：1405 / 1407
页数：3
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