Investigation of Using SiC MOSFET for High Temperature Applications

被引：5
|
作者：
Ouaida, Remy [1 ]
Berthou, Maxime [2 ]
Brosselard, Pierre [2 ]
Oge, Sebastien [1 ]
Bevilacqua, Pascal [2 ]
Joubert, Charles [2 ]
机构：
[1] THALES Microelect SAS, F-35370 Cap Bretagne Za Piquet, Etrelles, France
[2] CNRS, UMR 5005, AMPERE Lab, F-69621 Villeurbanne, France
来源：
EPE JOURNAL | 2015年 / 25卷 / 02期
关键词：
Silicon Carbide; Power MOSFET; High Temperature; Characterization; Lifetime; DEPENDENT DIELECTRIC-BREAKDOWN;
D O I：
10.1080/09398368.2015.11835467
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the performances expected by SiC MOSFETs for high temperature applications. A complete static and dynamic electrical characterization of SiC MOSFETs have been tested under varying temperature from 25 degrees C to 250 degrees C using suitable packaging materials. To go further, aging tests have been performed to evaluate lifetime of SiC MOSFET under switching condition up to 300 degrees C.
引用
收藏
页码：5 / 11
页数：7
相关论文
共 50 条
  • [41] A Simple Transfer Capacitance Measurement Method of SiC MOSFET in High-voltage Applications
    Li, Huaqing
    Yang, Chengzi
    Jin, Haoyuan
    Zhu, Mengyu
    Yu, Longyang
    Yang, Fengtao
    Wen, Junduo
    Wang, Laili
    2021 IEEE 12TH ENERGY CONVERSION CONGRESS AND EXPOSITION - ASIA (ECCE ASIA), 2021, : 320 - 324
  • [42] Evaluation of SiC matrix composites for high temperature applications
    Scoville, A.N.
    Reagan, P.
    Huffman, F.N.
    Advanced materials and manufacturing processes, 1988, 3 (04): : 643 - 668
  • [43] SiC BGJFET inverter for high temperature power applications
    Rozario, LV
    Sadwick, LP
    Hwu, RJ
    King, DB
    1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE, 1998, : 29 - 34
  • [44] AlN/SiC MEMS for High-Temperature Applications
    Esteves, Giovanni
    Habermehl, Scott D.
    Clews, Peggy J.
    Fritch, Chanju
    Griffin, Benjamin A.
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2019, 28 (05) : 859 - 864
  • [45] SiC Die Attach for High-Temperature Applications
    A. Drevin-Bazin
    F. Lacroix
    J. -F. Barbot
    Journal of Electronic Materials, 2014, 43 : 695 - 701
  • [46] SiC devices for power and high-temperature applications
    Wondrak, W
    Niemann, E
    Kroetz, G
    Held, R
    Constapel, R
    IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE 98) - PROCEEDINGS, VOLS 1 AND 2, 1998, : 153 - 156
  • [47] SiC-Die-Attachment for High Temperature Applications
    Heuck, N.
    Palm, G.
    Sauerberg, T.
    Stranz, A.
    Waag, A.
    Bakin, A.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 741 - 744
  • [48] A review on the joining of SiC for high-temperature applications
    Dang-Hyok Yoon
    Ivar E. Reimanis
    Journal of the Korean Ceramic Society, 2020, 57 : 246 - 270
  • [49] Future high temperature applications for SiC integrated circuits
    Zetterling, Carl-Mikael
    Lanni, Luigia
    Ghandi, Reza
    Malm, B. Gunnar
    Ostling, Mikael
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1647 - 1650
  • [50] A review on the joining of SiC for high-temperature applications
    Yoon, Dang-Hyok
    Reimanis, Ivar E.
    JOURNAL OF THE KOREAN CERAMIC SOCIETY, 2020, 57 (03) : 246 - 270
12345