Investigation of Using SiC MOSFET for High Temperature Applications

被引：5
|
作者：
Ouaida, Remy [1 ]
Berthou, Maxime [2 ]
Brosselard, Pierre [2 ]
Oge, Sebastien [1 ]
Bevilacqua, Pascal [2 ]
Joubert, Charles [2 ]
机构：
[1] THALES Microelect SAS, F-35370 Cap Bretagne Za Piquet, Etrelles, France
[2] CNRS, UMR 5005, AMPERE Lab, F-69621 Villeurbanne, France
来源：
EPE JOURNAL | 2015年 / 25卷 / 02期
关键词：
Silicon Carbide; Power MOSFET; High Temperature; Characterization; Lifetime; DEPENDENT DIELECTRIC-BREAKDOWN;
D O I：
10.1080/09398368.2015.11835467
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the performances expected by SiC MOSFETs for high temperature applications. A complete static and dynamic electrical characterization of SiC MOSFETs have been tested under varying temperature from 25 degrees C to 250 degrees C using suitable packaging materials. To go further, aging tests have been performed to evaluate lifetime of SiC MOSFET under switching condition up to 300 degrees C.
引用
收藏
页码：5 / 11
页数：7
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