Investigation of Using SiC MOSFET for High Temperature Applications

被引：5
|
作者：
Ouaida, Remy [1 ]
Berthou, Maxime [2 ]
Brosselard, Pierre [2 ]
Oge, Sebastien [1 ]
Bevilacqua, Pascal [2 ]
Joubert, Charles [2 ]
机构：
[1] THALES Microelect SAS, F-35370 Cap Bretagne Za Piquet, Etrelles, France
[2] CNRS, UMR 5005, AMPERE Lab, F-69621 Villeurbanne, France
来源：
EPE JOURNAL | 2015年 / 25卷 / 02期
关键词：
Silicon Carbide; Power MOSFET; High Temperature; Characterization; Lifetime; DEPENDENT DIELECTRIC-BREAKDOWN;
D O I：
10.1080/09398368.2015.11835467
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the performances expected by SiC MOSFETs for high temperature applications. A complete static and dynamic electrical characterization of SiC MOSFETs have been tested under varying temperature from 25 degrees C to 250 degrees C using suitable packaging materials. To go further, aging tests have been performed to evaluate lifetime of SiC MOSFET under switching condition up to 300 degrees C.
引用
收藏
页码：5 / 11
页数：7
相关论文
共 50 条
  • [1] Investigation of 1.2 kV SiC MOSFET for High Frequency High Power Applications
    Sheng, Honggang
    Chen, Zheng
    Wang, Fred
    Millner, Alan
    2010 TWENTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2010, : 1572 - 1577
  • [2] Gate Oxide Reliability Assessment of a SiC MOSFET for High Temperature Aeronautic Applications
    Santini, Thomas
    Sebastien, Morand
    Florent, Miller
    Luong-Viet Phung
    Allard, Bruno
    2013 IEEE ECCE ASIA DOWNUNDER (ECCE ASIA), 2013, : 385 - 391
  • [3] Investigation of a sic module with a high operating temperature for power applications
    Tokuda, H.
    Tanaka, Y.
    Nakagawa, H.
    Aoyagi, M.
    Fukuda, K.
    Ohashi, H.
    Tsuno, T.
    Hoshino, T.
    Namikawa, Y.
    Hayashi, H.
    2007 9TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS 1 AND 2, 2007, : 931 - 936
  • [4] Using SiC MOSFET in Swictched-Capacitor Converter for High Voltage Applications
    Alateeq, Ayoob
    Almalaq, Yasser
    Matin, Mohammad
    2016 North American Power Symposium (NAPS), 2016,
  • [5] High Performance SiC MOSFET Module for Industrial Applications
    Stevanovic, Ljubisa
    Rowden, Brian
    Harfman-Todorovic, Maja
    Losee, Peter
    Bolotnikov, Alexander
    Kennedy, Stacey
    Schuetz, Tobias
    Carastro, Fabio
    Datta, Rajib
    Tao, Fengfeng
    Raju, Ravi
    Cioffi, Philip
    2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 479 - 482
  • [6] Modeling of SiC MOSFET with Temperature Dependent Parameters and Its Applications
    Lu, Juejing
    Sun, Kai
    Wu, Hongfei
    Xing, Yang
    Huang, Lipei
    2013 TWENTY-EIGHTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2013), 2013, : 540 - 544
  • [7] A high temperature gate drive circuit for SiC MOSFET
    Qi, Feng
    Xu, Longya
    Wang, Jiangbo
    Zhao, Bo
    Zhou, Zhe
    Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, 2015, 30 (23): : 24 - 31
  • [8] High-temperature SiC MOSFET gas sensors
    Matocha, K
    Tilak, V
    Sandvik, P
    Tucker, J
    SEMICONDUCTOR MATERIALS FOR SENSING, 2005, 828 : 355 - 360
  • [9] Investigation and Comparison of Temperature-Sensitive Electrical Parameters of SiC mosfet at Extremely High Temperatures
    Lu, Xiaohui
    Wang, Laili
    Yang, Qingshou
    Yang, Fengtao
    Gan, Yongmei
    Zhang, Hong
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2023, 38 (08) : 9660 - 9672
  • [10] Development of a 1200 V, 120 A SiC MOSFET Module for High-Temperature and High-Frequency Applications
    Chen, Zheng
    Yao, Yiying
    Zhang, Wenli
    Boroyevich, Dushan
    Ngo, Khai
    Mattavelli, Paolo
    Burgos, Rolando
    2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2013, : 52 - 59
12345