Resonant Electron-Emission from a Flat Surface AlN/GaN System with Carbon Nanotube Gate Electrode

被引:0
|
作者
Yilmazoglu, O. [1 ]
Considine, L. [1 ]
Pavlidis, D. [1 ]
Hartnagel, H. L. [1 ]
Joshi, R. [2 ]
Schneider, J. J. [2 ]
Mimura, H. [3 ]
Evtukh, A. [4 ]
Semenenko, M. [4 ]
Litovchenko, V. [4 ]
机构
[1] Tech Univ Darmstadt, Dept High Frequency Elect, D-64283 Darmstadt, Germany
[2] Tech Univ Darmstadt, Eduard Zintl Inst, Fachgebiet Chemie, Petersenstr 30, D-64287 Darmstadt, Germany
[3] Univ Shizuoka, Res Inst Elect, Hamamatsu, Shizuoka, Japan
[4] Natl Acad Sci Ukraine, Inst Semicond Phys, Kiev, Ukraine
关键词
GaN; resonant emission; monochromatic emssion; CNT gate;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A polarized AlN/GaN five barrier heterostructure was grown and characterized for resonant electron emission in a diode configuration. Diodes of this type have extremely high resonant tunneling voltages of similar to 5 V, which is important for an effective electron emission over the surface gate-electrode vacuum barrier. The surface electrode consists of a carbon nanotube (CNT) network, which is highly conductive and has a good surface potential distribution and electron transparency, which is expected to be higher compared to a thin metal layer. The design proposed in this work aims in demonstrating monochromatic electron emission through the use of a resonant-tunneling configuration, semiconducting surface accelerating layer and a CNT surface gate-electrode.
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页码:171 / +
页数:2
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