Resonant Electron-Emission from a Flat Surface AlN/GaN System with Carbon Nanotube Gate Electrode

被引：0

作者：

Yilmazoglu, O. ^{[1
]}

Considine, L. ^{[1
]}

Pavlidis, D. ^{[1
]}

Hartnagel, H. L. ^{[1
]}

Joshi, R. ^{[2
]}

Schneider, J. J. ^{[2
]}

Mimura, H. ^{[3
]}

Evtukh, A. ^{[4
]}

Semenenko, M. ^{[4
]}

Litovchenko, V. ^{[4
]}

机构：

[1] Tech Univ Darmstadt, Dept High Frequency Elect, D-64283 Darmstadt, Germany

[2] Tech Univ Darmstadt, Eduard Zintl Inst, Fachgebiet Chemie, Petersenstr 30, D-64287 Darmstadt, Germany

[3] Univ Shizuoka, Res Inst Elect, Hamamatsu, Shizuoka, Japan

[4] Natl Acad Sci Ukraine, Inst Semicond Phys, Kiev, Ukraine

来源：

2011 24TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2011年

关键词：

GaN; resonant emission; monochromatic emssion; CNT gate;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A polarized AlN/GaN five barrier heterostructure was grown and characterized for resonant electron emission in a diode configuration. Diodes of this type have extremely high resonant tunneling voltages of similar to 5 V, which is important for an effective electron emission over the surface gate-electrode vacuum barrier. The surface electrode consists of a carbon nanotube (CNT) network, which is highly conductive and has a good surface potential distribution and electron transparency, which is expected to be higher compared to a thin metal layer. The design proposed in this work aims in demonstrating monochromatic electron emission through the use of a resonant-tunneling configuration, semiconducting surface accelerating layer and a CNT surface gate-electrode.

引用

页码：171 / +

页数：2

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