Dipole antennas based on SI-GaAs:Cr for generation and detection of terahertz radiation

被引：6

作者：

Sarkisov, S. Yu ^{[1
]}

Safiullin, F. D. ^{[1
]}

Skakunov, M. S. ^{[1
]}

Tolbanov, O. P. ^{[1
]}

Tyazhev, A. V. ^{[1
]}

Nazarov, M. M. ^{[2
]}

Shkurinov, A. P. ^{[3
]}

机构：

[1] Natl Res Tomsk State Univ, Siberian Phys Tech Inst, Tomsk, Russia

[2] Russian Acad Sci, Inst Laser & Informat Technol, Shatura, Moscow Region, Russia

[3] Moscow MV Lomonosov State Univ, Moscow, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2013年 / 55卷 / 08期

关键词：

dipole antenna; terahertz radiation; semi-insulating gallium arsenide; PHOTOCONDUCTIVE ANTENNAS;

D O I：

10.1007/s11182-013-9897-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Design and technology of fabrication of dipole terahertz radiation emitters and detectors based on semiinsulating GaAs compensated with chromium and having the nonequilibrium charge carrier lifetime of the order of 100 ns are described. Generation and detection of subterahertz radiation in dipole antennas excited by femtosecond laser pulses are experimentally investigated depending on the topology of contact electrodes and the parameters of the active medium.

引用

页码：890 / 898

页数：9

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