Terahertz photoluminescence from SI-GaAs by below gap excitation via EL2 level

被引：3
|
作者：
Oyama, Yutaka [1 ]
Dezaki, Hikari [1 ]
Shimizu, Yusaku [1 ]
Maeda, Kensaku [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Dept Mat Sci & Engn, Sendai, Miyagi 9808579, Japan
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 02期
关键词：
QUANTUM CASCADE LASERS; INFRARED-ABSORPTION; THERMAL RECOVERY; SILICON; DONORS; ELECTROLUMINESCENCE; RADIATION; IMPURITY; DEVICES;
D O I：
10.1063/1.4906039
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Terahertz emission by radiative transitions in semi-conductors via shallow impurity states is investigated. We report on the observation of terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level which is located at the center of band gap. In order to investigate the terahertz wave emission mechanisms, the emission spectra and temperature dependence of the emission intensity are evaluated. It is shown that intense terahertz emission from S.I.-GaAs over 120 K is observed due to the thermal recovery of photo-quenched EL2 meta-stable state, and that the emission peak frequency looks to be attributed to the shallow level energy in GaAs. (C) 2015 AIP Publishing LLC.
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页数：4
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