Terahertz photoluminescence from SI-GaAs by below gap excitation via EL2 level

被引：3
|
作者：
Oyama, Yutaka [1 ]
Dezaki, Hikari [1 ]
Shimizu, Yusaku [1 ]
Maeda, Kensaku [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Dept Mat Sci & Engn, Sendai, Miyagi 9808579, Japan
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 02期
关键词：
QUANTUM CASCADE LASERS; INFRARED-ABSORPTION; THERMAL RECOVERY; SILICON; DONORS; ELECTROLUMINESCENCE; RADIATION; IMPURITY; DEVICES;
D O I：
10.1063/1.4906039
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Terahertz emission by radiative transitions in semi-conductors via shallow impurity states is investigated. We report on the observation of terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level which is located at the center of band gap. In order to investigate the terahertz wave emission mechanisms, the emission spectra and temperature dependence of the emission intensity are evaluated. It is shown that intense terahertz emission from S.I.-GaAs over 120 K is observed due to the thermal recovery of photo-quenched EL2 meta-stable state, and that the emission peak frequency looks to be attributed to the shallow level energy in GaAs. (C) 2015 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] BEHAVIOR OF THE MIDGAP LEVEL EL2 IN VPE GaAs.
    Lu, Feng-zhen
    Wang, Jia-kuan
    Zou, Yuan-xi
    Ding, Yong-qing
    Xi You Jin Shu/Rare Metals, 1986, 5 (01): : 9 - 13
  • [22] HYDROSTATIC-PRESSURE DEPENDENCE OF THE EL2 LEVEL IN GAAS
    DOBACZEWSKI, L
    SIENKIEWICZ, A
    ACTA PHYSICA POLONICA A, 1987, 71 (03) : 341 - 343
  • [23] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN
    LAGOWSKI, J
    KAMINSKA, M
    PARSEY, JM
    GATOS, HC
    LICHTENSTEIGER, M
    APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1078 - 1080
  • [24] ACTIVATION-ENERGY AND DISTRIBUTION FUNCTION OF THE EL2 DEFECT LEVEL IN SI-IMPLANTED GAAS
    BISBEE, JE
    HALDER, NC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 119 (02): : 545 - 553
  • [25] High resolution EL2 and resistivity topography of SI GaAs wafers
    Wickert, M.
    Stibal, R.
    Hiesinger, P.
    Jantz, W.
    Wagner, J.
    IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 1999, : 21 - 24
  • [26] ON THE CHARGE STATE OF THE EL2 MID GAP LEVEL IN SEMI-INSULATING GAAS FROM A QUANTITATIVE-ANALYSIS OF THE COMPENSATION
    MEYER, B
    KRAMBROCK, K
    HOFMANN, D
    SPAETH, JM
    FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1989, 29 : 201 - 213
  • [27] ON THE CHARGE STATE OF THE EL2 MID GAP LEVEL IN SEMI-INSULATING GAAS FROM A QUANTITATIVE-ANALYSIS OF THE COMPENSATION
    MEYER, B
    KRAMBROCK, K
    HOFMANN, D
    SPAETH, JM
    FESTKORPER PROBLEME - ADVANCES IN SOLID STATE PHYSICS, VOL 29, 1989, 29 : 201 - 213
  • [28] Terahertz Generation from SI-GaAs Stripline Antenna with Different Structural Parameters
    Shi, Wei
    Hou, Lei
    Liu, Zheng
    2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2, 2009, : 436 - 437
  • [29] Terahertz generation from SI-GaAs stripline antenna with different structural parameters
    Shi, Wei
    Hou, Lei
    Liu, Zheng
    Tongue, Thomas
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2009, 26 (09) : A107 - A112
  • [30] THERMALLY ACTIVATED DE-EXCITATION OF THE EL2 METASTABLE STATE IN GAAS
    TRAUTMAN, P
    KAMINSKA, M
    BARANOWSKI, JM
    CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (03) : 413 - 416
12345