High-Power High-Contrast RF MEMS Capacitive Switch

被引：0

作者：

Solazzi, Francesco ^{[1
]}

Palego, Cristiano ^{[2
]}

Molinero, David ^{[2
]}

Farinelli, Paola ^{[3
]}

Colpo, Sabrina ^{[1
]}

Hwang, James C. M. ^{[2
]}

Margesin, Benno ^{[1
]}

Sorrentinoo, Roberto ^{[4
]}

机构：

[1] Fondz Bruno Kessler IRST, Via Sommarive 18, I-38123 Trento, Italy

[2] Lehigh Univ, Bethlehem, PA 18015 USA

[3] RF Microtech, I-06132 Perugia, Italy

[4] Univ Perugia, RF Microtech, I-06125 Perugia, Italy

来源：

2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年

关键词：

Micro-electromechanical systems; microwave devices; microwave power; switches; temperature coefficient;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.

引用

页码：32 / 35

页数：4

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