High-isolation MEMS capacitive shunt switch

被引：0

作者：

Zhang, Y ^{[1
]}

Onodera, K ^{[1
]}

Maeda, R ^{[1
]}

机构：

[1] Natl Inst Adv Sci & Technol, Adv Mfg Res Inst, MEMS & Packaging Grp, Tsukuba, Ibaraki 3058564, Japan

来源：

IEEE 2005 International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications Proceedings, Vols 1 and 2 | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Many efforts have been made to find materials with high dielectric constant for the application of RF capacitive shunt switch in order to obtain large down-state capacitance and therefore high isolation. In this work, HfO2 dielectric was suggested for the application of RF shunt switch. The HfO2 dielectric prepared in this work had the break-down field higher than 20 MV/cm. The RF switch using 45-nm-thick HfO2 dielectric showed excellent performance. Its insertion loss is lower than 0.8 dB until 50 GHz at the up-state position. Its isolation is higher than 30 dB until 50 GHz at the down-state, particularly, higher than 50 dB in the range of 10 - 15 GHz.

引用

页码：228 / 231

页数：4

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