RF MEMS asymmetric capacitive switch with high-isolation at selected low-microwave frequency

被引：2
|
作者：
Qian, Jiangyuan [1 ]
Chang, Hung-Pin
Cetiner, Bedri A.
Bachman, Mark
De Flaviis, Franco
Li, G. P.
机构：
[1] Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA
[2] Morehead State Univ, Ctr Space Sci, Morehead, KY 40351 USA
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2007年 / 49卷 / 03期
关键词：
microelectromechanical devices; microwave switches; micromachining;
D O I：
10.1002/mop.22235
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An asymmetric RF microelectromechanical systems (MEMS) capacitive switch with a novel architecture employing mode switching from a coplanar waveguide (CPW) mode to a coupled slotline (CSL) mode is reported for selected frequency within the 2-10 GHz low microwave frequency range. An additional metal-insulator-metal (MIM) capacitor is introduced on one end of the switch membrane as a tuning capacitor. The signal line of CSL is used as a tuning inductor These two tuning elements together can improve the isolation of a regular capacitive RF MEMS switch by about 20 dB at the induced additional low resonant frequency ranging from 2 to 10 GHz. The measurements of the fabricated asymmetric switch demonstrated excellent isolation improvements. (c) 2007 Wiley Periodicals, Inc.
引用
收藏
页码：702 / 706
页数：5
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