Properties of Al2O3 thin films grown by atomic layer deposition

被引：0
|
作者：
Froehlich, K. [1 ]
Micusik, M. [2 ]
Dobrocka, E. [1 ]
Siffalovic, P. [3 ]
Gucmann, F. [1 ]
Fedor, J. [1 ]
机构：
[1] SAS, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia
[2] Inst Polymer, SAS, Bratislava 84541, Slovakia
[3] Inst Phys, SAS, Bratislava 84511, Slovakia
来源：
NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2012年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin Al2O3 films were prepared by thermal and plasma enhanced atomic layer deposition at 100 and 200 degrees C. Growth per cycle ranges from 0.108 to 0.139 nm/cycle. Composition of the films was investigated by XPS. Carbon impurity was higher for the films grown at 100 degrees C. The films grown at 200 degrees C were slightly oxygen deficient. The Al2O3 films grown at low temperatures have promising applications in microelectronics.
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页码：171 / 174
页数：4
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