Growth of Dielectric Al2O3 Films by Atomic Layer Deposition

被引：3

作者：

Ghiraldelli, Elisa ^{[1
]}

Pelosi, Claudio ^{[1
]}

Gombia, Enos ^{[1
]}

Frigeri, Cesare ^{[1
]}

Vanzetti, Lia ^{[2
]}

Abdullayeva, Sevda ^{[3
]}

机构：

[1] CNR, IMEM, I-43100 Parma, Italy

[2] Fdn Bruno Kessler irst, I-38050 Povo, Italy

[3] Natl Acad Sci, Inst Phys, Baku, Azerbaijan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 10期

关键词：

Al2O3; ALD; high-k dielectric; I-V; C-V; TEM;

D O I：

10.1143/JJAP.47.8174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A great interest is devoted to the development of memories having both high density and low energy consumption for application in personal computers and in automated electronic devices. This target can be achieved if a high dielectric material is obtained. One of the most promising candidates is aluminium oxide, Al2O3, due to its high dielectric constant (similar to 10), wide band gap (similar to 8eV) and thermal stability. Al2O3 can be prepared as an amorphous layer, consequently avoiding strain and electrically active states at the interface between the oxide and the substrate material. In this communication we report on the growth of amorphous Al2O3 layers on n-type silicon. [DOI: 10.1143/JJAP.47.8174]

引用

页码：8174 / 8177

页数：4

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