State of the art Power Switching Devices in SiC and their Applications

被引：0

作者：

Ostling, Mikael ^{[1
]}

Salemi, Arash ^{[1
]}

Elahipanah, Hossein ^{[1
]}

Zetterling, Carl-Mikael ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch ICT Integrated Devices & Circuits, Electrum 229, SE-16440 Kista, Sweden

来源：

2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年

关键词：

Silicon Carbide; devices; Switch; transistor; low loss; high voltage; high temperature; SiC IC; SiC MEMS; Bio; SILICON-CARBIDE; IGBTS; MEMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper gives an overview of the current state of the art device technology for SiC discrete devices and applications. The superior switching performance is discusses as well as the energy efficiency of SiC devices. New emerging applications of SiC devices are also discussed focusing on high temperature capability such as integrated digital and analog circuits up to 600 C. Finally, MEMS and Bio applications will be briefly reviewed.

引用

页码：122 / 123

页数：2

共 50 条

[21] Progress in High Voltage SiC and GaN Power Switching Devices
Chow, T. Paul
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1077 - 1082
[22] SiC and GaN high-voltage power switching devices
Chow, T.P.
Materials Science Forum, 2000, 338
[23] Current status of SiC power switching devices: Diodes & GTOs
Seshadri, S
Agarwal, AK
Hall, WB
Mani, SS
MacMillan, MF
Rodrigues, R
Hanson, T
Khatri, S
Sanger, PA
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 23 - 32
[24] Fast SiC Switching Limits for Pulsed Power Applications
Collier, Landon
Kajiwara, Taiga
Dickens, James
Mankowski, John
Neuber, Andreas
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2019, 47 (12) : 5306 - 5313
[25] Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications
Gui, Handong
Zhang, Zheyu
Chen, Ruirui
Niu, Jiahao
Tolbert, Leon M.
Wang, Fei
Costinett, Daniel
Blalock, Benjamin J.
Choi, Benjamin B.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2020, 8 (04) : 4160 - 4172
[26] Developments of SiC devices and SiC inverters aimed at electric power applications
Sugawara Y.
IEEJ Transactions on Fundamentals and Materials, 2019, 139 (04) : 219 - 225
[27] Developments of SiC devices and SiC inverters aimed at electric power applications
Sugawara, Yoshitaka
ELECTRICAL ENGINEERING IN JAPAN, 2019, 208 (3-4) : 3 - 9
[28] Ultra Low Inductance Power Module for Fast Switching SiC Power Devices
Takao, Kazuto
Kyogoku, Shinya
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, : 313 - 316
[29] STATE OF ART OF SWITCHING POWER-SUPPLIES
KRESTEL, E
SIEMENS ZEITSCHRIFT, 1977, 51 (12): : 972 - 976
[30] Quantum, power, and compound semiconductor devices - Breaking the limits: Si, SIC and GaN power switching devices
Ferdinand Braun Institut
不详
Tech. Dig. Int. Electron Meet. IEDM, 2006,

← 1 2 3 4 5 →