Developments of SiC devices and SiC inverters aimed at electric power applications

被引：1
|
作者：
Sugawara, Yoshitaka [1 ]
机构：
[1] SiC Power Elect Network, 2-19-10 Mikanohara Cho, Hitachi, Ibaraki 3160026, Japan
来源：
ELECTRICAL ENGINEERING IN JAPAN | 2019年 / 208卷 / 3-4期
关键词：
diode; high heat resistive resin; inverter; MOSFET; SiC; thyristor;
D O I：
10.1002/eej.23213
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The developments of SiC power devices has been proceeded remarkably since 1990. SiC power devices have been payed attentions as one of the candidate power devices for next HVDC transmissions and its R&Ds have been started in the KANSAI electric power company since 1995. In this paper, a series of R&Ds for the SiC devices and SiC inverters performed in the company are presented from the historical viewpoints.
引用
收藏
页码：3 / 9
页数：7
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