K+-ISFET type microsensors fabricated by ion implantation

被引：11
|
作者：
Baccar, ZM [1 ]
JaffrezicRenault, N [1 ]
Martelet, C [1 ]
Jaffrezic, H [1 ]
Marest, G [1 ]
Plantier, A [1 ]
机构：
[1] UNIV LYON 1,IPNL,GRP TRAITEMENT SURFACES,F-69622 VILLEURBANNE,FRANCE
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1997年 / 48卷 / 01期
关键词：
K+-ISFET; ion implantation; sensitivity; selectivity; electrochemical sensors;
D O I：
10.1016/S0254-0584(97)80077-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The possibility of obtaining K+-ISFET microsensors produced by a mild ion implantation technique is investigated. The selective membrane is obtained by low energy implantation of K+ and Al+ ions directly into the thin silica insulator (100 nm) of the microsensor. The K+-sensitivity, selectivity, drift, reproducibility, and the life time are studied. The sensitivity of the implanted ISEFET equal to 41-44 mV pK(-1) is still stable after a whole year's tests.
引用
收藏
页码：56 / 59
页数：4
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