K+-ISFET type microsensors fabricated by ion implantation

被引：11
|
作者：
Baccar, ZM [1 ]
JaffrezicRenault, N [1 ]
Martelet, C [1 ]
Jaffrezic, H [1 ]
Marest, G [1 ]
Plantier, A [1 ]
机构：
[1] UNIV LYON 1,IPNL,GRP TRAITEMENT SURFACES,F-69622 VILLEURBANNE,FRANCE
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1997年 / 48卷 / 01期
关键词：
K+-ISFET; ion implantation; sensitivity; selectivity; electrochemical sensors;
D O I：
10.1016/S0254-0584(97)80077-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The possibility of obtaining K+-ISFET microsensors produced by a mild ion implantation technique is investigated. The selective membrane is obtained by low energy implantation of K+ and Al+ ions directly into the thin silica insulator (100 nm) of the microsensor. The K+-sensitivity, selectivity, drift, reproducibility, and the life time are studied. The sensitivity of the implanted ISEFET equal to 41-44 mV pK(-1) is still stable after a whole year's tests.
引用
收藏
页码：56 / 59
页数：4
相关论文
共 50 条
  • [21] GAAS HALL ELEMENT FABRICATED BY ION-IMPLANTATION
    TANOUE, H
    TSURUSHIMA, T
    KATAOKA, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1188 - 1192
  • [22] Optical properties of silicon nanoclusters fabricated by ion implantation
    Shimizu-Iwayama, T
    Kurumado, N
    Hole, DE
    Townsend, PD
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6018 - 6022
  • [23] SILICON SOLAR CELL FABRICATED BY ION IMPLANTATION.
    Tokiguchi, Katsumi
    Itoh, Haruo
    Saitoh, Tadashi
    Japan Annual Reviews in Electronics, Computers & Telecommunications, 1984, 13 : 235 - 247
  • [24] Conductivity type and crystal orientation of GaAs nanocrystals fabricated in silicon by ion implantation and flash lamp annealing
    Prucnal, S.
    Liedke, M. O.
    Zhou, Shengqiang
    Voelskow, M.
    Muecklich, A.
    Turek, M.
    Zuk, J.
    Skorupa, W.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 312 : 104 - 109
  • [25] PLANAR-TYPE GAAS AVALANCHE PHOTODETECTOR FABRICATED BY FOCUSED GA ION-BEAM IMPLANTATION
    HIRAYAMA, Y
    IGUCHI, H
    OKAMOTO, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1863 - 1863
  • [26] Spectroscopic and electrochemical properties of ion-sensing membranes fabricated by ion implantation
    Pham, M.T.
    Howitz, S.
    Hueller, J.
    Albrecht, J.
    Koch, B.
    Voehse, H.
    Sensors and Actuators, B: Chemical, 1993, B14 (1 -3 pt 2) : 746 - 748
  • [27] PLANAR INSB PHOTODIODES FABRICATED BY BE AND MG ION-IMPLANTATION
    HURWITZ, CE
    DONNELLY, JP
    SOLID-STATE ELECTRONICS, 1975, 18 (09) : 753 - 756
  • [28] Optical waveguides fabricated by nitrogen ion implantation in fused silica
    Liu, Chun-Xiao
    Fu, Li-Li
    Zheng, Rui-Lin
    Guo, Hai-Tao
    Zhou, Zhi-Guang
    Li, Wei-Nan
    Lin, She-Bao
    Wei, Wei
    OPTICAL ENGINEERING, 2016, 55 (02)
  • [29] Magnetoresistive nanojunctions fabricated via focused ion beam implantation
    Stefanescu, E.
    Hong, J.
    Guduru, R.
    Lavrenov, A.
    Litvinov, D.
    Khizroev, S.
    JOURNAL OF NANOPARTICLE RESEARCH, 2013, 15 (01)
  • [30] A feasibility study of embedded conductive layer fabricated by ion implantation
    Zhang, H. Y.
    Fan, X. R.
    Meng, Q. Y.
    Wei, Y.
    Huang, Y.
    He, H. M.
    Wang, Y.
    Wu, W. J.
    EPL, 2022, 138 (04)
12345