Gate current dependent hot-carrier-induced degradation in LDMOS transistors

被引：10
|
作者：
Chen, J. F. [1 ,2 ]
Tian, K. -S. [1 ,2 ]
Chen, S. -Y. [1 ,2 ]
Lee, J. R. [1 ,2 ]
Wu, K. -M. [3 ]
Huang, T. -Y. [3 ]
Liu, C. M. [3 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[3] Taiwan Semicond Mfg Co, Hsinchu 30077, Taiwan
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 16期
关键词：
D O I：
10.1049/el:20080520
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot-carrier- induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations,hot- electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (I-g) consists mainly of electron injection, Ig is found to correlate with device degradation well. Such Ig dependent device degradation suggests that Ig should be examined in evaluating the hot- carrier reliability of LDMOS transistors.
引用
收藏
页码：991 / 992
页数：2
相关论文
共 50 条
  • [41] A Review on Hot-Carrier-Induced Degradation of Lateral DMOS Transistor
    Liu, Siyang
    Sun, Weifeng
    Qian, Qinsong
    Wei, Jiaxing
    Fang, Jiong
    Li, Ting
    Zhang, Chi
    Shi, Longxing
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2018, 18 (02) : 298 - 312
  • [42] Analysis of mechanisms for hot-carrier-induced VLSI circuit degradation
    Huh, Yoonjong
    Yang, Dooyoung
    l'Yee, Hyeokjae
    Sung, Yungkwon
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 833 - 837
  • [43] Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors
    Hatzopoulos, A
    Dimitriadis, CA
    Pananakakis, G
    Ghibaudo, G
    Kamarinos, G
    APPLIED PHYSICS LETTERS, 2004, 84 (16) : 3163 - 3165
  • [44] Hot-carrier-induced degradation of N2O-oxynitrided gate oxide NMOSFET's
    Matsuoka, T
    Tauchi, S
    Ohtsuka, H
    Taniguchi, K
    Hamaguchi, C
    Kakimoto, S
    Uda, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) : 1364 - 1373
  • [45] HOT-CARRIER-INDUCED DEGRADATION IN ASYMMETRIC STRUCTURED SUBMICRON MOSFETS
    NITAYAMA, A
    TAKENOUCHI, N
    HAMAMOTO, T
    OOWAKI, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C445 - C445
  • [46] ANALYSIS ON GATE-OXIDE THICKNESS DEPENDENCE OF HOT-CARRIER-INDUCED DEGRADATION IN THIN-GATE OXIDE NMOSFETS
    TOYOSHIMA, Y
    IWAI, H
    MATSUOKA, F
    HAYASHIDA, H
    MAEGUCHI, K
    KANZAKI, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (06) : 1496 - 1503
  • [47] Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation
    Lunenborg, MM
    DeGraaff, HC
    Mouthaan, AJ
    Verweij, JF
    MICROELECTRONICS AND RELIABILITY, 1996, 36 (11-12): : 1667 - 1670
  • [48] Analysis of mechanisms for hot-carrier-induced VLSI circuit degradation
    Huh, YJ
    Yang, DY
    lYee, HK
    Sung, YK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 833 - 837
  • [49] Mechanisms of Hot-Carrier-Induced Threshold-Voltage Shift in High-Voltage p-Type LDMOS Transistors
    Chen, Jone F.
    Tian, Kuen-Shiuan
    Chen, Shiang-Yu
    Wu, Kuo-Ming
    Shih, J. R.
    Wu, Kenneth
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (12) : 3203 - 3206
  • [50] Investigation on the hot-carrier-induced degradation for 1.8 V pMOS under different gate voltage stresses
    Liu S.-Y.
    Yu C.-H.
    Zhang C.-W.
    Sun W.-F.
    Su W.
    Zhang A.-J.
    Liu Y.-W.
    Wu S.-L.
    He X.-W.
    Sun, Wei-Feng (swffrog@seu.edu.cn), 1600, Chinese Institute of Electronics (44): : 348 - 352
12345