Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis

被引：29
|
作者：
Suh, YS [1 ]
Heuss, GP [1 ]
Misra, V [1 ]
机构：
[1] N Carolina State Univ, Dept Elect Engn, Raleigh, NC 27695 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期
关键词：
D O I：
10.1063/1.1453478
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, the Fowler-Nordheim tunneling in TaSixNy/SiO2/p-Si structures has been analyzed. The effective barrier height at the metal-oxide interface was extracted by Fowler-Nordheim current analysis. The barrier height was found to increase with increased annealing temperature. The barrier height was correlated with the extracted work function from capacitance-voltage analysis. This indicated that the work function of TaSixNy films changes under high temperature annealing from 4.2similar to4.3 eV after 400degreesC anneals to similar to4.8 eV after 900degreesC anneals. We believe that the mechanism that causes the work function to increase is the formation of a Ta-disilicide layer at the interface between the electrode and the dielectric. (C) 2002 American Institute of Physics.
引用
收藏
页码：1403 / 1405
页数：3
相关论文
共 50 条
  • [21] Effects of postannealing on electrical characteristics and Fowler-Nordheim current stress resistance of Si oxynitride grown in helicon-wave-excited O2-N2-Ar plasma
    Tachikawa, M
    Ikoma, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A): : 1022 - 1026
  • [22] The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures
    Mao, LF
    Zhang, HQ
    Tan, CH
    Xu, MZ
    [J]. MICROELECTRONICS RELIABILITY, 2002, 42 (02) : 175 - 181
  • [23] Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures
    Chanana, RK
    McDonald, K
    Di Ventra, M
    Pantelides, ST
    Feldman, LC
    Chung, GY
    Tin, CC
    Williams, JR
    Weller, RA
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (16) : 2560 - 2562
  • [24] FOWLER-NORDHEIM TUNNELING INJECTION IN THE SI-SIO2 SYSTEM TREATED WITH ARGON PLASMA
    PASKALEVA, A
    ATANASSOVA, E
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (08) : 1566 - 1570
  • [25] Ageing of metal/ultra-thin oxide/semiconductor structures under Fowler-Nordheim current injection
    Kassmi, K
    Aziz, A
    Olivie, F
    [J]. NANOTECHNOLOGY, 2004, 15 (01) : 237 - 242
  • [26] Fowler-Nordheim hole tunneling in metal-Er2O3-silicon structures
    Zhu, Y. Y.
    Fang, Z. B.
    Chen, S.
    Liao, C.
    Wu, Y. Q.
    Fan, Y. L.
    Jiang, Z. M.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (12)
  • [27] Fowler-Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon
    Jiang, J
    Awadelkarim, OO
    Werking, J
    Bersuker, G
    Chan, YD
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03): : 875 - 879
  • [28] OSCILLATORY FIELD-DEPENDENCE OF FOWLER-NORDHEIM TUNNELING AS A PROBE OF THE SI-SIO2 INTERFACE
    ZAMANI, N
    MASERJIAN, J
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 219 - 220
  • [29] FOWLER-NORDHEIM TUNNELING CURRENT IN A MG/POLYCRYSTALLINE SI OXIDE/N+ POLYCRYSTALLINE SI METAL-OXIDE-SILICON STRUCTURE
    KONG, SO
    KWOK, CY
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (19) : 2667 - 2669
  • [30] Measurements of the widths of transition regions at Si-SiO2 interfaces in metal-oxide-semiconductor structures from quantum oscillations in Fowler-Nordheim tunneling current
    Mao, LF
    Tan, CH
    Xu, MZ
    [J]. SOLID STATE COMMUNICATIONS, 2001, 119 (02) : 67 - 71
12345