Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing

被引：0

作者：

Rollo, Tommaso ^{[1
]}

Esseni, David ^{[1
]}

机构：

[1] Univ Udine, DPIA, Via Sci 206, I-33100 Udine, Italy

来源：

2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a simulation study addressing the physics and design of ferroelectric MOSFETs and, in particular, we argue that a retrograde channel doping profile may help obtain a subthreshold swing well below 60mV/dec. Our analysis suggests that ferroelectric MOSFETs should be operated at gate voltages smaller than those triggering the hysteretic behavior, and have the potential to realize on current to off current ratios of 10(6) with a voltage swing as small as 0.2V, which is the ultimate goal for small slope transistors.

引用

页码：360 / 363

页数：4

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