Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing

被引：0
|
作者：
Rollo, Tommaso [1 ]
Esseni, David [1 ]
机构：
[1] Univ Udine, DPIA, Via Sci 206, I-33100 Udine, Italy
来源：
2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a simulation study addressing the physics and design of ferroelectric MOSFETs and, in particular, we argue that a retrograde channel doping profile may help obtain a subthreshold swing well below 60mV/dec. Our analysis suggests that ferroelectric MOSFETs should be operated at gate voltages smaller than those triggering the hysteretic behavior, and have the potential to realize on current to off current ratios of 10(6) with a voltage swing as small as 0.2V, which is the ultimate goal for small slope transistors.
引用
收藏
页码：360 / 363
页数：4
相关论文
共 50 条
  • [21] Negative Capacitance Oxide Thin-Film Transistor With Sub-60 mV/Decade Subthreshold Swing
    Li, Yuxing
    Liang, Renrong
    Wang, Jiabin
    Jiang, Chunsheng
    Xiong, Benkuan
    Liu, Houfang
    Wang, Zhibo
    Wang, Xuefeng
    Pang, Yu
    Tian, He
    Yang, Yi
    Ren, Tian-Ling
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (05) : 826 - 829
  • [22] First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs
    Chung, Wonil
    Si, Mengwei
    Shrestha, Pragya R.
    Campbell, Jason P.
    Cheung, Kin P.
    Ye, Peide D.
    2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2018, : 89 - 90
  • [23] InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
    Alian, A.
    Mols, Y.
    Bordallo, C. C. M.
    Verreck, D.
    Verhulst, A.
    Vandooren, A.
    Rooyackers, R.
    Agopian, P. G. D.
    Martino, J. A.
    Thean, A.
    Lin, D.
    Mocuta, D.
    Collaert, N.
    APPLIED PHYSICS LETTERS, 2016, 109 (24)
  • [24] In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications
    Xu, Qian
    Liu, Xingqiang
    Wan, Bensong
    Yang, Zheng
    Li, Fangtao
    Lu, Junfeng
    Hu, Guofeng
    Pan, Caofeng
    Wang, Zhong Lin
    ACS NANO, 2018, 12 (09) : 9608 - 9616
  • [25] Threshold voltage modulation of AlGaN/GaN MIS-FinFETs with sub-60 mV/decade subthreshold swing
    Dai, Quan
    Kim, Ryun-Hwi
    Lee, Jun-Hyeok
    Kim, Jeong-Gil
    Thingujam, Terirama
    Kang, Seung-Hyeon
    Ahn, Woo-Hyun
    Kim, Eun-Jin
    Lee, Jung-Hee
    2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2020,
  • [26] Can the subthreshold swing in a classical FET be lowered below 60 mV/decade?
    Salahuddin, Sayeef
    Datta, Supriyo
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, : 693 - +
  • [27] AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade
    Lu, Hao
    Yang, Ling
    Hou, Bin
    Zhang, Meng
    Wu, Mei
    Ma, Xiao-Hua
    Hao, Yue
    APPLIED PHYSICS LETTERS, 2022, 120 (17)
  • [28] Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs
    Tiwari, P. K.
    Panda, C. R.
    Agarwal, A.
    Sharma, P.
    Jit, S.
    IET CIRCUITS DEVICES & SYSTEMS, 2010, 4 (04) : 337 - 345
  • [29] I-NPN: A sub-60mV/decade, sub-0.6V selection diode for STTRAM
    Deshmukh, S.
    Lashkare, S.
    Rajendran, B.
    Ganguly, U.
    2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2013, : 113 - 114
  • [30] Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel
    Dai, Quan
    Son, Dong-Hyeok
    Yoon, Young-Jun
    Kim, Jeong-Gil
    Jin, Xiaoshi
    Kang, In-Man
    Kim, Dae-Hyun
    Xu, Yue
    Cristoloveanu, Sorin
    Lee, Jung-Hee
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (04) : 1699 - 1703
12345