Photoluminescence Studies of ZnO Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy

被引：7
|
作者：
Kim, Min Su [1 ]
Nam, Giwoong [2 ]
Leem, Jae-Young [1 ,2 ]
机构：
[1] Inje Univ, Dept Nano Syst Engn, Ctr Nano Mfg, Gimhae 621749, Gyungnam, South Korea
[2] Inje Univ, Dept Nano Engn, Gimhae 621749, Gyungnam, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 05期
关键词：
Zinc Oxide; Nanorod; Plasma-Assisted Molecular Beam Epitaxy; Photoluminescence; THIN-FILMS; OPTICAL-PROPERTIES; POROUS SILICON; BUFFER LAYERS; TEMPERATURE; RECOMBINATION; FABRICATION; DEPENDENCE; EMISSION; OXIDE;
D O I：
10.1166/jnn.2013.7320
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Metal catalyst-free ZnO nanorods were grown on PS with buffer layers grown at 450 degrees C by plasma-assisted molecular beam epitaxy. Room temperature and temperature-dependent photoluminescence were carried out to investigate the optical properties of the ZnO nanorods with the average diameter of 120 nm and length of 300 nm. Three emission peaks, free excition, neutral-donor exciton, and free electron-to-neutral acceptor, were observed at 10 K. Huang-Rhys factor S of the ZnO nanorods was 0.978, which is much higher than that of ZnO thin films. The values of Varshni's empirical equation fitting parameters were alpha = 4 x 10(-3) eV/K, beta = 4.1 x 10(4) K, and E-g(0) = 3.388 eV and the activation energy was about 96 meV.
引用
收藏
页码：3582 / 3585
页数：4
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