Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

被引：8

作者：

Gu, Hong ^{[1
,2
]}

Tian, Feifei ^{[3
]}

Zhang, Chunyu ^{[3
]}

Xu, Ke ^{[3
]}

Wang, Jiale ^{[1
]}

Chen, Yong ^{[1
]}

Deng, Xuanhua ^{[1
]}

Liu, Xinke ^{[1
]}

机构：

[1] Shenzhen Univ, Chinese Engn & Res Inst Microelect, Shenzhen Key Lab Special Funct Mat, Coll Mat Sci & Engn,Guangdong Res Ctr Interfacial, Shenzhen 518060, Peoples R China

[2] Shenzhen Univ, Coll Optoelect Engn, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期

关键词：

Vertical SBDs; Ge-doped GaN substrates; Reverse recovery time; HVPE; BREAKDOWN VOLTAGE;

D O I：

10.1186/s11671-019-2872-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be similar to 1.3x10(6)cm(-2). With the electrical performance measurements conducted, the SBDs show a low turn-on voltage V-on (0.70 similar to 0.78V) and high current I-on/I-off ratio (9.9x10(7)similar to 1.3x10(10)). The reverse recovery characteristics were investigated. The reverse recovery time was obtained to be 15.8, 16.2, 18.1, 21.22, and 24.5ns for the 100-, 200-, 300-, 400-, and 500-m-diameter SBDs, respectively. Meanwhile, the reverse recovery time and reverse recovery charge both show a significant positive correlation with the electrode area.

引用

页数：6

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